

Add to Cart
CSD18504Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET
1 Features
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package
2 Applications
DC-DC Conversion
Secondary Side Synchronous Rectifier
Battery Motor Control
3 Description
This 5.3 mΩ, SON 5 × 6 mm, 40 V NexFETTM power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-Source Voltage | 40 | V | |
Qg | Gate Charge Total (4.5 V) | 7.7 | nC | |
Qgd | Gate Charge Gate-to-Drain | 2.4 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 7.5 | mΩ |
VGS =10V | 5.3 | mΩ | ||
VGS(th) | Threshold Voltage | 1.9 | V |
Ordering Information
Device | Qty | Media | Package | Ship |
CSD18504Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
CSD18504Q5AT | 250 | 7-Inch Reel |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 50 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 75 | ||
Continuous Drain Current(1) | 15 | ||
IDM | Pulsed Drain Current(2) | 275 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 77 | ||
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID =43A,L=0.1mH,RG =25Ω | 92 | mJ |