CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm
Brand Name:Ti
Model Number:CSD13202Q2
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Delivery Time:The goods will be shipped within 3 days once received fund
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Shenzhen China
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Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details
CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm
1 Features
- Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 2-mm × 2-mm Plastic Package
2 Applications
Optimized for Load Switch Applications
Storage, Tablets, and Handheld Devices
Optimized for Control FET Applications
Point of Load Synchronous Buck Converters
3 Description
This 12-V, 7.5-mΩ NexFETTM power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.
Product Summary
TA = 25°C | TYPICAL VAUE | UNIT | ||
VDS | Drain-to-Source Voltage | 12 | V | |
Qg | Gate Charge Total (4.5 V) | 5.1 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.76 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 2.5 V | 9.1 | mΩ |
VGS = 4.5 V | 7.5 | |||
VGS(th) | Threshold Voltage | 0.8 | V | |
Device Information
DEVICE | MEDIA | QTY | PACKAGE | SHIP |
CSD13202Q2 | 7-Inch Reel | 3000 | SON 2.00-mm × 2.00-mm Plastic Package | Tape and Reel |
Absolute Maximum Ratings
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 12 | V |
VGS | Gate-to-Source Voltage | ±8 | V |
ID | Continuous Drain Current (Package Limit) | 22 | A |
Continuous Drain Current(1) | 14.4 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 76 | A |
PD | Power Dissipation(1) | 2.7 | W |
TJ, TSTG | Operating Junction, Storage Temperature | –55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID =20A,L=0.1mH,RG =25Ω | 20 | mJ |
CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm
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