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CA3045, CA3046
General Purpose NPN Transistor Arrays
The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair.
The transistors of the CA3045 and CA3046 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.
Features
• Two Matched Transistors
- VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
- IIO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA (Max)
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• 5 General Purpose Monolithic Transistors
• Operation From DC to 120MHz
• Wide Operating Current Range
• Full Military Temperature Range
Applications
• Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power
Applications at Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array”
for Suggested Applications
Pinout
Absolute Maximum Ratings
Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage (VCIO, Note 1) . . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (IC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
NOTES: 1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
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