Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

Brand Name:ONSEMI
Certification:Original Factory Pack
Model Number:MJ15025G
Minimum Order Quantity:5pcs
Delivery Time:1 Day
Payment Terms:T/T, Western Union,PayPal
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G


PNP − MJ15023, MJ15025*

Silicon Power Transistors

The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


Features

• High Safe Operating Area (100% Tested) −2 A @ 80 V

• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

• Pb−Free Packages are Available*


MJ1502x = Device Code

x = 3 or 5

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin


ORDERING INFORMATION

DevicePackageShipping
MJ15023TO−204100 Units / Tray
MJ15023G

TO−204

(Pb−Free)

100 Units / Tray
MJ15025TO−204100 Units / Tray
MJ15025G

TO−204

(Pb−Free)

100 Units / Tray

There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.


The data of Figure 1 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.


TYPICAL CHARACTERISTICS


China Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G supplier

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

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