NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

Certification:new & original
Model Number:2SC5200
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details

2SC5200/FJL4315

NPN Epitaxial Silicon Transistor


Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier


Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

-- TO220F package, FJPF5200 : 50 watts


Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

SymbolParameterRatingsUnits
BVCBOCollector-Base Voltage230V
BVCEOCollector-Emitter Voltage230V
BVEBOEmitter-Base Voltage5V
ICCollector Current(DC)15A
IBBase Current1.5A
PD

Total Device Dissipation(TC=25°C)

Derate above 25°C

150

1.04

W

W/°C

TJ, TSTGJunction and Storage Temperature- 50 ~ +150°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.


Thermal Characteristics* Ta=25°C unless otherwise noted

SymbolParameterMaxUnits
RθJCThermal Resistance, Junction to Case0.83°C/W

* Device mounted on minimum pad size


hFE Classification

ClassificationRO
hFE155 ~ 11080 ~ 160

Typical Characteristics


Package Dimensions


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NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

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