NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

Features

• -5A, -30V. R_DS(ON) = 0.065W @ V_GS = -10V

R_DS(ON) = 0.1W @ V_GS = -4.5V.

• High density cell design for extremely low R_DS(ON).

• High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings T_A = 25°C unless otherwise noted

Notes:

1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by design while RqCA is determined by the user's board design.

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42℃/W when mounted on a 1 in² pad of 2oz copper.

b. 95℃/W when mounted on a 0.066 in² pad of 2oz copper.

c. 110℃/W when mounted on a 0.0123 in² pad of 2oz copper.

Scale 1 : 1 on letter size paper

Stock Offer (Hot Sell)

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electronic components that are hard to find and even obsolete. We have taken pride in our innovation, reliability and service, especially in the semiconductor marketplace.
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