PMBT3906 Power Mosfet Transistor PNP switching transistor

Certification:new & original
Model Number:PMBT3906
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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Product Details

PMBT3906 PNP switching transistor


General description

PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PMBT3904.


Features and benefits „

Collector-emitter voltage VCEO = −40 V „

Collector current capability IC = −200 mA


Applications „

General amplification and switching


Quick reference data

SymbolParameterConditionsMinTypMaxUnit
VCEOcollector-emitter voltageopen base--−40V
ICcollector current--−200V

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

SymbolParameterConditionsMinMaxUnit
VCBOcollector-base voltageopen emitter-−40V
VCEOcollector-emitter voltageopen base-−40V
VEBOemitter-base voltageopen collector-−6V
ICcollector current--200mA
ICMpeak collector current--200mA
IBMpeak base current--100mA
Ptottotal power dissipationTamb ≤ 25 °C [1]-250mW
Tjjunction temperature-150°C
Tambambient temperature-65+150°C
Tstgstorage temperature-65+150°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).


Package outline SOT23 (TO-236AB)


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China PMBT3906 Power Mosfet Transistor PNP switching transistor supplier

PMBT3906 Power Mosfet Transistor PNP switching transistor

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