TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor
Certification:new & original
Model Number:TLP734
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Shenzhen China
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Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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TOSHIBA Photocoupler GaAs Ired&Photo−Transistor
TLP733, TLP734
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
TLP734 is no−base internal connection for high−EMI environments.
- Collector−emitter voltage: 55 V (min.)
- Current transfer ratio: 50% (min.)
- Rank GB: 100% (min.)
- UL recognized: UL1577, file no. E67349
- BSI approved: BS EN60065: 1994
- Certificate no. 7364
- BS EN60950: 1992
- Certificate no. 7365
- SEMKO approved: SS4330784
- Certificate no. 9325163, 9522142
- Isolation voltage: 4000 Vrms (min.)
- Option (D4) type
- VDE approved: DIN VDE0884 / 06.92,
- Certificate no. 74286, 91808
- Maximum operating insulation voltage: 630, 890 VPK
- Highest permissible over voltage: 6000, 8000 VPK
- VDE approved: DIN VDE0884 / 06.92,
(Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”
7.62 mm pich 10.16 mm pich
standard type TLP×××F type
Creepage distance : 7.0 mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Internal creepage path : 4.0 mm (min.) 4.0 mm (min.)
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)
Maximum Ratings (Ta = 25°C)
| Characteristic | Symbol | Rating | Unit | |
| LED | Forward current | IF | 60 | mA |
| Forward current derating (Ta ≥ 39°C) | ∆IF / °C | -0.7 | mA / °C | |
| Peak forward current (100 µs pulse, 100 pps) | IFP | 1 | A | |
| Reverse voltage | VR | 5 | V | |
| Junction temperature | Tj | 125 | °C | |
| Detector | Collectoremitter voltage | VCEO | 55 | V |
| Collectorbase voltage (TLP733) | VCBO | 80 | V | |
| Emittercollector voltage | VECO | 7 | V | |
| Emitterbase voltage (TLP733) | VEBO | 7 | V | |
| Collector current | IC | 50 | mA | |
| Power dissipation | PC | 150 | mW | |
| Power dissipation derating (Ta ≥ 25°C) | ∆PC / °C | -1.5 | mW / °C | |
| Junction temperature | Tj | 125 | °C | |
| Storage temperature range | Tstg | -55~125 | °C | |
| Operating temperature range | Topr | -40~100 | °C | |
| Lead soldering temperature (10 s) | Tsol | 260 | °C | |
| Total package power dissipation | PT | 250 | mW | |
| Total package power dissipation derating (Ta ≥ 25°C) | ∆PT / °C | -2.5 | mW / °C | |
| Isolation voltage (AC, 1 min., R.H.≤ 60%) | BVS | 4000 | Vrms | |
Weight: 0.42 g
Pin Configurations (top view)
TLP733
1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base
TLP734
1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc
TLP734 Power Mosfet Transistor New & Original GaAs Ired & Photo Transistor
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