Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

Brand Name:IRF
Certification:Original Factory Pack
Model Number:IRLML6402TRPBF
Minimum Order Quantity:20pcs
Delivery Time:1 Day
Payment Terms:T/T, Western Union,PayPal
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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HEXFET Power MOSFET T


♦Ultra Low On-Resistance

♦P-Channel MOSFET


♦SOT-23 Footprint

♦Low Profile (<1.1mm)


♦Available in Tape and Reel

♦Fast Switching


These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.


A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.


ParameterMax.Units
VDSDrain- Source Voltage-20V
ID @ TA = 25°CContinuous Drain Current, VGS @ -4.5V-3.7A
ID @ TA= 70°CContinuous Drain Current, VGS @ -4.5V-2.2
IDMPulsed Drain Current-22
PD @TA = 25°CPower Dissipation1.3W
PD @TA = 70°CPower Dissipation0.8
Linear Derating Factor0.01W/°C
EASSingle Pulse Avalanche Energy11mJ
VGSGate-to-Source Voltage± 12V

China Ultra Low On-Resistance  HEXFET Power MOSFET  P-Channel MOSFET SOT-23 Footprint  Fast Switching   IRLML6402TRPBF supplier

Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

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