HFA08TB60PBF Rectifier Diode fast recovery rectifier diodes

Certification:new & original
Model Number:HFA08TB60PBF
Minimum Order Quantity:20pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Place of Origin:original factory
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Location: Shenzhen China
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
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HFA08TB60PbF Vishay High Power Products

HEXFRED® Ultrafast Soft Recovery Diode, 8 A


FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low IRRM

• Very low Qrr

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for industrial level


BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

TO-220AC

DESCRIPTION

HFA08TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available.


With basic ratings of 600 V and 8 A continuous current, the HFA08TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery.


The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes.


The HEXFRED HFA08TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.


PRODUCT SUMMARY

VR600 V
VF at 8 A at 25 °C1.7 V
IF(AV)8 A
trr (typical)18 ns
TJ (maximum)150 °C
Qrr (typical)65nC
dI(rec)M/dt (typical)240 A/µs
IRRM5.0 A

ABSOLUTE MAXIMUM RATINGS

PARAMETERSYMBOLTEST CONDITIONSVALUESUNITS
Cathode to anode voltageVR600V
Maximum continuous forward currentIFTC = 100 °C8A
Single pulse forward currentIFSM60A
Maximum repetitive forward currentIFRM24A
Maximum power dissipationPDTC = 25 °C36W
TC = 100 °C14W
Operating junction and storage temperature rangeTJ, Tstg- 55 to + 150°C

Reverse Recovery Parameter Test Circuit


Reverse Recovery Waveform and Definitions


China HFA08TB60PBF Rectifier Diode fast recovery rectifier diodes supplier

HFA08TB60PBF Rectifier Diode fast recovery rectifier diodes

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