IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

Brand Name:INFINEON
Model Number:IPD082N10N3
Minimum Order Quantity:1pcs
Delivery Time:3
Payment Terms:D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Verified Supplier
Location: Shenzhen China
Address: 2515 century huiduhuixuan, No. 3078, Shennan Middle Road, Huaqiangbei street, Futian District, Shenzhen, China
Supplier`s last login times: within 2 hours
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Product Details

ISO9001.pdf

IPD082N10N3 is an N channel MOSFET transistor. The following are its applications, conclusions, and parameters:
Application:
Used as a high-voltage and high-power load switch
Used as a switch for converters and regulators
Conclusion:
High voltage capability: Vds=100V
Low conduction resistance: Rds (on)=8.2m Ω (typ.)
Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.)
High temperature performance: can operate at temperatures up to 175 ℃
Complies with RoHS directives and lead-free requirements
Parameters:
Vds (drain source voltage): 100V
Vgs (gate source voltage): ± 20V
Id (drain current): 80A
Rds (on) (conduction resistance): 8.2m Ω (typ.)
Qg (gate charge): 135nC (typ.)
Td (on) (start delay time): 16ns (typ.)
Td (off) (shutdown delay time): 60ns (typ.)
Tj (junction temperature): 175 ℃
Complies with RoHS directives and lead-free requirements.

Product Technical Specifications
EU RoHSCompliant with Exemption聽
ECCN (US)EAR99
Part StatusUnconfirmed
SVHCYes
SVHC Exceeds ThresholdYes
AutomotiveUnknown
PPAPUnknown
Product CategoryPower MOSFET
ConfigurationSingle
Process TechnologyOptiMOS 3
Channel ModeEnhancement
Channel TypeN
Number of Elements per Chip1
Maximum Drain Source Voltage (V)100
Maximum Gate Source Voltage (V)卤20
Maximum Gate Threshold Voltage (V)3.5
Maximum Continuous Drain Current (A)80
Maximum Gate Source Leakage Current (nA)100
Maximum IDSS (uA)1
Maximum Drain Source Resistance (mOhm)8.2@10V
Typical Gate Charge @ Vgs (nC)42@10V
Typical Gate Charge @ 10V (nC)42
Typical Input Capacitance @ Vds (pF)2990@50V
Maximum Power Dissipation (mW)125000
Typical Fall Time (ns)8
Typical Rise Time (ns)42
Typical Turn-Off Delay Time (ns)31
Typical Turn-On Delay Time (ns)18
Minimum Operating Temperature (掳C)-55
Maximum Operating Temperature (掳C)175
PackagingTape and Reel
MountingSurface Mount
Package Height2.41(Max)
Package Width6.22(Max)
Package Length6.73(Max)
PCB changed2
TabTab
Standard Package NameTO-252
Supplier PackageDPAK
Pin Count3
Lead ShapeGull-wing
China IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor supplier

IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

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