LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver
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Certification:Lead free / RoHS Compliant
Model Number:LMG3425R030RQZR
Minimum Order Quantity:10
Delivery Time:5-8 work days
Payment Terms:T/T, L/C, Western Union
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Product Details
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Product Details
Gate Drivers LMG3425R030RQZR GaN FET with integrated driver and ideal diode mode VQFN54
Description
LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes ideal diode mode, which reduces third-quadrant losses by enabling adaptive dead-time control.
Specifications
| Driver ICs - Various | |
| High-Side, Low-Side | |
| SMD/SMT | |
| VQFN-54 | |
| 1 Driver | |
| 1 Output | |
| 7.5 V | |
| 18 V | |
| Inverting, Non-Inverting | |
| 2.5 ns | |
| 21 ns | |
| - 40 C | |
| + 125 C |
Applications
- High density industrial power supplies
- Solar inverters and industrial motor drives
- Uninterruptable power supplies
- Merchant network and server PSU
- Merchant telecom rectifiers
Features
Qualified for JEDEC JEP180 for hard-switching
topologies
•
600
-V GaN-on-Si FET with Integrated gate driver
–
Integrated high precision gate bias voltage
–
200-V/ns CMTI
–
2.2
-MHz switching frequency
–
30-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
–
Operates from 7.5-V to 18-V supply
•
Robust protection
–
Cycle-by-cycle overcurrent and latched short-
circuit protection with < 100-ns response
–
Withstands 720-V surge while hard-switching
–
Self-protection from internal overtemperature
and UVLO monitoring
•
Advanced power management
–
Digital temperature PWM output
–
Ideal diode mode reduces third-quadrant losses
in
LMG3425R030
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600-V GaN-on-Si FET with Integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns CMTI
- 2.2-MHz switching frequency
- 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5-V to 18-V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Ideal diode mode reduces third-quadrant losses in LMG3425R030
Measurement to Determine Propagation Delays and Slew Rates
Qualified for JEDEC JEP180 for hard-switching
topologies
•
600
-V GaN-on-Si FET with Integrated gate driver
–
Integrated high precision gate bias voltage
–
200-V/ns CMTI
–
2.2
-MHz switching frequency
–
30-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
–
Operates from 7.5-V to 18-V supply
•
Robust protection
–
Cycle-by-cycle overcurrent and latched short-
circuit protection with < 100-ns response
–
Withstands 720-V surge while hard-switching
–
Self-protection from internal overtemperature
and UVLO monitoring
•
Advanced power management
–
Digital temperature PWM output
–
Ideal diode mode reduces third-quadrant losses
in
LMG3425R030
Qualified for JEDEC JEP180 for hard-switching
topologies
•
600
-V GaN-on-Si FET with Integrated gate driver
–
Integrated high precision gate bias voltage
–
200-V/ns CMTI
–
2.2
-MHz switching frequency
–
30-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
–
Operates from 7.5-V to 18-V supply
•
Robust protection
–
Cycle-by-cycle overcurrent and latched short-
circuit protection with < 100-ns response
–
Withstands 720-V surge while hard-switching
–
Self-protection from internal overtemperature
and UVLO monitoring
•
Advanced power management
–
Digital temperature PWM output
–
Ideal diode mode reduces third-quadrant losses
in
LMG3425R030
FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample
free?
A:Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we
will confirm lead time for you based on your order quantity.
LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver
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