BSS123 SA SOT23 Electronic IC Chips 3 Pin Surface Mount Installation

Brand Name:original
Model Number:BSS123
Minimum Order Quantity:discussible
Delivery Time:1-7work days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Price:discussible
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Location: Shenzhen Guangdong China
Address: B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China
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New Original Bss123 Sa Sot23 integrated circuit ic chip


Products Description:


BSS123 N-Channel MOSFET 100V 170mA/0.17A SOT-23/SC-59 marking SA fast switching/logic level compatible

Maximum Source-Drain Voltage Vds Drain-Source Voltage| 100V ---|--- Maximum Gate-Source Voltage Vgs(±) Gate-Source Voltage| 100V Maximum Drain Current Id Drain Current| 170mA/0.17A Source-Drain On-resistanceΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 3.4Ω/Ohm @1.7A,10V Turn-on voltage Vgs(th) Gate-Source Threshold Voltage| 0.8-1.2V Pd Power Dissipation| 360mW/0.36W Description & Applications| N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)= 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON)= 6W @ VGS = 10V High density cell design for extremely low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. Description & Application | N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)=6W@VGS=10V. BSS123: 0.17A, 100V. RDS(ON)=6W@ VGS= 10V High-density battery is designed with extremely low RDS(ON) voltage to control small signal switch.


Technological Parameters:


Input Capacitance (Ciss)73pF @25V(Vds)
Drain-source resistance1.2 Ω
Dissipated power360 mW
threshold voltage1.7 V
Drain-Source Voltage (Vds)100 V
Installation methodSurface Mount
pin number3
packageSOT-23-3
Operating temperature-55℃ ~ 150℃
PackingTape & Reel (TR)

China BSS123 SA SOT23 Electronic IC Chips 3 Pin Surface Mount Installation supplier

BSS123 SA SOT23 Electronic IC Chips 3 Pin Surface Mount Installation

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