S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band
Model Number:S12060-02
Minimum Order Quantity:1
Delivery Time:5-8workingdays
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:China
Supply Ability:1000
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Location:
Shenzhen Guangdong China
Address:
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
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within 26 hours
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Product Details
S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 nm Band
Features:
Temperature coefficient of breakdown voltage:
0.4 V/°C
High-speed response
High sensitivity and low noise
Applications:
Optical rangefinders
FSO
Optical fi ber communications
Datasheet:
| Maximum sensitivity wavelength (typical) | 800 nm |
| Sensitivity wavelength range | 400 to 1000 nm |
| Photosensitivity (Typical) | 0.5 A/W |
| Dark current (maximum) | 0.5 nA |
| Cutoff Frequency (Typical) | 1000 MHz |
| Junction capacitance (typical) | 1.5 pF |
| Breakdown voltage (typical) | 200 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.4 V/°C |
| Gain ratio (typical value) | 100 |
S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band
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