Infineon Technologies LDMOS FET 65V 2.14GHz 15.8dB Gain Transistor for RF Power Amplification

Payment Terms:L/C, D/A, D/P, T/T, Western Union,
Category:Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs
Product Status:Obsolete
Mounting Type:Surface Mount
Voltage - Rated:65 V
Package:Tape & Reel (TR)
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Location: Shenzhen Guangdong China
Address: Room 1105, New Asia Guoli Building, No. 18 Zhonghang Road, Huaqiang North Street, Huahang Community, Shenzhen, Guangdong, China
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RF Mosfet 30 V 1.6 A 2.14GHz 15.8dB 50W H-37260-2
China Infineon Technologies LDMOS FET 65V 2.14GHz 15.8dB Gain Transistor for RF Power Amplification supplier

Infineon Technologies LDMOS FET 65V 2.14GHz 15.8dB Gain Transistor for RF Power Amplification

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