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36 mesh high content black silicon carbide, silicon carbide for sandblasting and polishing, samples can be sent
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.
36 mesh high content black silicon carbide, silicon carbide for sandblasting and polishing, samples can be sent
Extremely hard and sharp abrasive
Will produce a matte surface finish
Capable of metal removal
Highly friable abrasive media which is reusable but less durable
than brown aluminum oxide
Cleaning or etching the hardest sub-surfaces
May be required for some applications that require brazing or
welding after blasting
Used for grinding, lapping, and wire saw cutting as well as
abrasive blasting
The specifications of silicon carbide
Angular shape
MOHs hardness: 9.5
Highly friable abrasive
Micro grits available
Approximately 105 lbs/cu. ft. bulk density
Manufactured to ANSI Table 2 grit sizes
Custom grit sizes and blends available
36 mesh high content black silicon carbide, silicon carbide for sandblasting and polishing, samples can be sent
36 mesh high content black silicon carbide, silicon carbide for sandblasting and polishing, samples can be sent
Grit Size Available (P, F)
P series: P24, P30, P36, P40, P50, P60, P80, P100, P120, P150,
P180, P220, P240, P280, P320, P360, P400, P500, P600, P800, P1000,
P1200, P1500, P2000, P2500, P3000
F series: F14, F16,F22,F24,F30, F36, F40, F46, F54, F60, F70, F80,
F90, F100, F120, F150, F180, F220, F230, F240, F280, F320, F360,
F400, F500, F600, F800, F1000, F1200
other special specification and other standard graded powder is
available on request
Production
Black Silicon Carbide is mainly made of Quartz sand, petroleum
coke, smelted by above2500°Cin the electric furnace. The hardness
is between corundum and diamond. The Hardness is superior to
corundum, it has the function of conductivity and thermal
conductivity. It is suitable to process metals and non-metallic
materials, such as gray cast iron, non-ferrous metal, stone,
leather, rubber, and on on. It also widely used in refractories,
metallurgic additives.
Because of the rarity of natural moissanite, most silicon carbide
is synthetic. It is used as an abrasive, and more recently as a
semiconductor and diamond simulant of gem quality. The simplest
manufacturing process is to combine silica sand and carbon in an
Acheson graphite electric resistance furnace at a high temperature,
between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2
particles in plant material (e.g. rice husks) can be converted to
SiC by heating in the excess carbon from the organic material. The
silica fume, which is a byproduct of producing silicon metal and
ferrosilicon alloys, also can be converted to SiC by heating with
graphite at 1,500 °C (2,730 °F)
Synthetic SiC crystals ~3 mm in diameter.
Synthetic SiC Lely crystals
The material formed in the Acheson furnace varies in purity,
according to its distance from the graphite resistor heat source.
Colorless, pale yellow and green crystals have the highest purity
and are found closest to the resistor. The color changes to blue
and black at greater distance from the resistor, and these darker
crystals are less pure. Nitrogen and aluminium are common
impurities, and they affect the electrical conductivity of SiC.
Pure silicon carbide can be made by the so-called Lely process, in
which SiC powder is sublimated into high-temperature species of
silicon, carbon, silicon dicarbide (SiC2), and disilicon carbide
(Si2C) in an argon gas ambient at 2500 °C and redeposited into
flake-like single crystals,sized up to 2×2 cm, at a slightly colder
substrate. This process yields high-quality single crystals, mostly
of 6H-SiC phase (because of high growth temperature). A modified
Lely process involving induction heating in graphite crucibles
yields even larger single crystals of 4 inches (10 cm) in diameter,
having a section 81 times larger compared to the conventional Lely
process.Cubic SiC is usually grown by the more expensive process of
chemical vapor deposition (CVD).Homoepitaxial and heteroepitaxial
SiC layers can be grown employing both gas and liquid phase
approaches.Pure silicon carbide can also be prepared by the thermal
decomposition of a polymer, poly(methylsilyne), under an inert
atmosphere at low temperatures. Relative to the CVD process, the
pyrolysis method is advantageous because the polymer can be formed
into various shapes prior to thermalization into the ceramic.
Abrasive and cutting tools
In the arts, silicon carbide is a popular abrasive in modern
lapidary due to the durability and low cost of the material. In
manufacturing, it is used for its hardness in abrasive machining
processes such as grinding, honing, water-jet cutting and
sandblasting. Particles of silicon carbide are laminated to paper
to create sandpapers and the grip tape on skateboards.
In 1982 an exceptionally strong composite of aluminium oxide and
silicon carbide whiskers was discovered. Development of this
laboratory-produced composite to a commercial product took only
three years. In 1985, the first commercial cutting tools made from
this alumina and silicon carbide whisker-reinforced composite were
introduced to the market.
Structural material
silicon carbide is used in composite armor (e.g. Chobham armor),
and in ceramic plates in bulletproof vests. Dragon Skin, which was
produced by Pinnacle Armor, used disks of silicon carbide.
Silicon carbide is used as a support and shelving material in high
temperature kilns such as for firing ceramics, glass fusing, or
glass casting. SiC kiln shelves are considerably lighter and more
durable than traditional alumina shelves.
In December 2015, infusion of silicon carbide nano-particles in
molten magnesium was mentioned as a way to produce a new strong and
plastic alloy suitable for use in aeronautics, aerospace,
automobile and micro-electronics.
Automobile parts
Silicon-infiltrated carbon-carbon composite is used for high
performance "ceramic" brake discs, as it is able to withstand
extreme temperatures. The silicon reacts with the graphite in the
carbon-carbon composite to become carbon-fiber-reinforced silicon
carbide (C/SiC). These discs are used on some road-going sports
cars, supercars, as well as other performance cars including the
Porsche Carrera GT, the Bugatti Veyron, the Chevrolet Corvette ZR1,
Bentleys, Ferraris, Lamborghinis, some specific high performance
Audis, and the McLaren P1.Silicon carbide is also used in a
sintered form for diesel particulate filters. SiC is also used as
an oil additive to reduce friction, emissions, and harmonics.
Foundry crucibles
SiC is used in crucibles for holding melting metal in small and
large foundry applications.
Electric systems
The earliest electrical application of SiC was in lightning
arresters in electric power systems. These devices must exhibit
high resistance until the voltage across them reaches a certain
threshold VT at which point their resistance must drop to a lower
level and maintain this level until the applied voltage drops below
VT.
It was recognized early on that SiC had such a voltage-dependent
resistance, and so columns of SiC pellets were connected between
high-voltage power lines and the earth. When a lightning strike to
the line raises the line voltage sufficiently, the SiC column will
conduct, allowing strike current to pass harmlessly to the earth
instead of along the power line. Such SiC columns proved to conduct
significantly at normal power-line operating voltages and thus had
to be placed in series with a spark gap. This spark gap is ionized
and rendered conductive when lightning raises the voltage of the
power line conductor, thus effectively connecting the SiC column
between the power conductor and the earth. Spark gaps used in
lightning arresters are unreliable, either failing to strike an arc
when needed or failing to turn off afterwards, in the latter case
due to material failure or contamination by dust or salt. Usage of
SiC columns was originally intended to eliminate the need for the
spark gap in a lightning arrester. Gapped SiC lightning arresters
were used as lightning-protection tool and sold under GE and
Westinghouse brand names, among others. The gapped SiC arrester has
been largely displaced by no-gap varistors that use columns of zinc
oxide pellets.
Electronic circuit elements