2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Brand Name:Toshiba
Model Number:2SC5200-O(Q)
Minimum Order Quantity:1pcs
Delivery Time:1day
Payment Terms:T/T, Western Union
Place of Origin:JP
Contact Now

Add to Cart

Verified Supplier
Location: Shenzhen Guangdong China
Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
Supplier`s last login times: within 1 hours
Product Details Company Profile
Product Details

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole

Toshiba
Product Category:Bipolar Transistors - BJT
RoHS:Details
Through Hole
TO-3P-3
NPN
Single
230 V
230 V
5 V
400 mV
15 A
150 W
30 MHz
-
+ 150 C
2SC
Tray
Brand:Toshiba
Continuous Collector Current:15 A
DC Collector/Base Gain hfe Min:55
DC Current Gain hFE Max:160
Height:26 mm
Length:20.5 mm
Product Type:BJTs - Bipolar Transistors
Subcategory:Transistors
Technology:Si
Width:5.2 mm
Unit Weight:0.239863 oz

Power Amplifier Applications

• High breakdown voltage: VCEO = 230 V (min)

• Complementary to 2SA1943

• Suitable for use in 100-W high fidelity audio amplifier’s output stage



Specifications

  • Manufacturer: Toshiba
  • Transistor Type: NPN
  • Package Type: TO-3PL
  • Maximum Power Dissipation: 150W
  • Collector Emitter Voltage (VCEO): 230V
  • Maximum Collector Current: 15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Frequency: 30MHz
  • Mounting Type: Through Hole
  • Operating Temperature: 150°C TJ
  • Part Status: Obsolete




China 2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) supplier

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Inquiry Cart 0