High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
Model Number:Tungsten Target
Minimum Order Quantity:Negotiate
Delivery Time:30 days after receiving down payment
Payment Terms:L/C, D/A, D/P, T/T
Price:Negitionable
Supply Ability:10000sets/month
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Luoyang China
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Product Details
High Purity 99.97% Tungsten Target For Sputtering Coating
Introduction
1. Tungsten sputtering target adopts best-demonstrated techniques
including X-ray fluorescence (XRF), glow discharge mass
spectrometry (GDMS), and inductively coupled plasma (ICP);
2. Tungsten target from Achemetal is provided with high purity up
to 99.97%, density 18.8-19g/cm3, homogeneous organization
structure, and fine grain;
3. Our tungsten sputtering target has been approved by the ASTM B
760-2007 and GB 3875-2006.
PARAMETER
OD(mm) | ID(mm) | Length(mm) | Custom Made |
140-300 | 120-280 | 100-3300 |
Model Number | W1 | |||
Shape | customized | |||
Chemical Composition | 99.95% W | |||
Feature
1. High density
2. High wear-resistant
3. High thermal conductivity with low thermal expansion coefficient
Specification
Atomic number | 74 |
CAS number | 7440-33-7 |
Atomic mass | 183.84 [g/mol] |
Melting point | 3420 °C |
Boiling point | 5555 °C |
Density at 20 °C | 19.25 [g/cm3] |
Crystal structure | Body-centered cubic |
Coefficient of linear thermal expansion at 20 °C | 4.410-6[m/(mK)] |
Thermal conductivity at 20 °C | 164 [W/(mK)] |
Specific heat at 20 °C | 0.13 [J/(gK)] |
Electrical conductivity at 20 °C | 18.2106[S/m] |
Specific electrical resistance at 20 °C | 0.055 [(mm2)/m] |
APPLICATIONS
semiconductor
chemical vapor deposition (CVD)
physical vapor deposition (PVD) display
High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
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