High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks

Brand Name:Sintec Optronics
Model Number:STCX Series
Delivery Time:5-7days
Payment Terms:T/T via bank
Place of Origin:China
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Location: Wuhan Hubei China
Address: Sintec Industrial Park, Optics Vally of China, Wuhan, Hubei Province, PR China
Supplier`s last login times: within 39 hours
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High-power Diode Single Emitter Laser Chips / Bars / Arrays / Stacks

(1) High-power Single Emitter Laser Chips – BC Series

Optical
Center Wavelength nm 915 915 976 976
Wavelength Tolerance nm ±10 ±10 ±3 ±3
Output Power W 25 30 25 30
Operating Mode # CW CW CW CW
Fast-axis Divergence Deg 55 55 55 55
Slow-axis Divergence Deg 9.5 9.5 9.5 9.5
Spectral Width (FWHM) nm 4 4 4 4
Wavelength Temp Coefficient nm/℃ 0.3 0.3 0.33 0.33
TE Polarization % 97 97 97 97
Electrical
Emitter Width μm 195 230 195 230
Cavity Length mm 4.5 4.5 4.5 4.5
Width μm 400 400 400 400
Thickness μm 145 145 145 145
Geometric
Electro-optic Conversion Eff. % 62 62 63 63
Slope Efficiency W/A 1.15 1.15 1.1 1.1
Thershold Current A 1.5 1.8 1.1 1.5
Operating Current A 25 30 25 30
Operating Voltage V 1.65 1.65 1.55 1.55

(2) High-power Diode Bar – BB Series

Optical
Center Wavelength nm 808 808 808 808 940 940
Wavelength Tolerance nm ±10 ±10 ±10 ±3 ±3 ±3
Output Power W 50 60 100 ≥500 200 ≥700
Fast-axis Divergence Deg ≤65 ≤65 ≤65 ≤65 ≤55 ≤55
Slow-axis Divergence Deg ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5
Spectral Width (FWHM) nm ≤2.5 ≤2.5 ≤3 ≤3.5 ≤3 5
TE Polarization TM/TE TE TE TE TE TE TE
Wavelength Temp Coefficient nm/℃ 0.28 0.28 0.28 0.28 0.3 0.3
Electrical
Electro-optic Conversion Eff % ≥55 ≥55 ≥55 ≥58 ≥63 ≥63
Slope Efficiency W/A 1.25 1.25 1.25 1.25 1 1.15
Threshold Current A 8 12 15 25 25 25
Operating Current A 50 60 105 ≤430 220 650
Operating Voltage V 1.8 1.8 1.8 2.0 1.55 1.7
Pulse Width us - - - 200 - 500
Pulse frequency Hz - - - 400 - 160
Pulse duty cycle % - - - 8 - 8
Geometric
Number of Emitters # 19 49 49 34 24 34
Emitter Width μm 150 100 100 232 200 232
Emitter Pitch μm 500 200 200 290 400 290
Fill Factor % 30 50 50 80 50 80
Cavity Length mm 1.0 1.0 1.5 1.5 3 2
Bar Thickness μm 145 145 145 115 115 115
Bar Length mm 10 10 10 10.25 10.25 10.25
Thermal
Operating Temperature 25 25 25 25 20 25
Storage Temperature 40~80 -40~80 40~80 40~80 -40~80 40~80
Flow Velocity L/min / 0.25 0.25 0.20 0.25 0.25

(3) High-power Diode VCSEL Chips – TOF series

Optical
Center Wavelength@Iop nm 808 850 940 940
Spectral width (half width) nm 2 2 2 2
Wavelength shift / temperature nm/℃ 0.07 0.07 0.07 0.07
Emitter aperture μm 10 10 10 10
Emitter minimum pitch μm 44 47 33 40
Emitter number / 621 1216 305 364
Output Power W 3.1 4 2.1 3.1
Operating current A 3.5 5 2.8 3.5
Power consumption W 7 10 5.6 7
Operating Voltage V 2 2 2 2
Operating efficiency % 35 40 40 40
Threshold current A 0.7 1.2 0.38 0.47
Divergence angle ° 22 22 20 20
Geometric
Emitter length μm 916 1535 525 916
Emitter width μm 901 1560 615 610
Chip length μm 1206 1845 695 996
Chip width μm 1006 1670 795 890
Chip thickness μm 100 100 100 100

(4) High-power Diode VCSEL Chips – SL Series

Optical
Center Wavelength@Iop nm 934 940 946
Spectral width (half width) nm 2
Wavelength shift / temperature nm/℃ 0.07
Emitter aperture μm 8
Emitter minimum pitch μm 21
Emitter number(Area A) - 377
Emitter number(Area B) - 6
Output Power(Area A) W 1.3 1.5 1.7
Output Power(Area B) W 0.024
Single point power W 0.004
Operating current(Area A) A 3.6
Operating current(Area B) A 0.06
Power consumption(Area A) W 3.6
Power consumption(Area B) W 0.06
Operating Voltage V 2
Operating efficiency % 40 45
Threshold current(Area A) A 0.38
Threshold current(Area B) A 0.006
Divergence angle ° 20
Geometric
Luminous zone length μm 523
Light-emitting area width μm 548
Chip length μm 758 778 798
Chip width μm 701 721 741
Chip thickness μm 90 100 110

(5) High-power Diode VCSEL Chips – LI Series

Optical
Center Wavelength nm 905 940
Spectral width (half width) nm 2 2
Wavelength shift / temperature nm/℃ 0.07 0.07
Emitter aperture μm 12 12
Emitter minimum pitch μm 22 22
Emitter number / 136 136
Output Power W 60 60
Operating current A 15 15
Power consumption W 300 300
Operating Voltage V 25 25
Operating efficiency % 20 20
Threshold current A 0.2 0.2
Divergence angle ° 20 20
Geometric
Emitter length μm 273 273
Emitter width μm 288 288
Chip length μm 520 520
Chip width μm 401 401
Chip thickness μm 100 100

(6) High-power Diode Laser Device – COS Series

Optical
Center Wavelength nm 915 915 976 976
Wavelength Tolerance nm ±10 ±10 ±3 ±3
Output Power W 25 30 25 30
Operating Mode # CW CW CW CW
Fast-axis Divergence Deg 55 55 55 55
Slow-axis Divergence Deg 9.5 9.5 9.5 9.5
Spectral Width (FWHM) nm 4 4 4 4
Wavelength Temperature Coefficient nm/℃ 0.3 0.3 0.33 0.33
TE Polarization % 97 97 97 97
Electrical
Electrio-optic Conversion Eff % 62 62 63 63
Slope Efficiency W/A 1.15 1.15 1.1 1.1
Thershold Current A 1.5 1.8 1.1 1.5
Operating Current A 25 30 25 30
Operating Voltage V 1.65 1.65 1.55 1.55
Geometric
Emitter Width μm 195 230 195 230
Cavity Length mm 4.5 4.5 4.5 4.5
Width μm 400 400 400 400
Thickness μm 145 145 145 145

(7) High-power Diode Laser Devices – MCC Series

Optical
Center Wavelength nm 808 808 808 808 940 940
Wavelength Tolerance nm ±10 ±10 ±10 ±10 ±3 ±3
Output Power W 50 60 100 ≥500 200 200
Fast-axis Divergence Deg ≤65 ≤65 ≤65 ≤65 ≤55 ≤55
Slow-axis Divergence Deg ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5
Spectral Width (FWHM) nm ≤2.5 ≤2.5 ≤3 ≤3.5 ≤3 ≤3
Polarization Mode TM/TE TE TE
Wavelength Temperature Coefficient nm/℃ 0.28 0.28 0.28 0.28 0.3 0.3
Electrical
Electrio-optic Conversion Eff % ≥55 ≥55 ≥55 ≥58 ≥63 ≥63
Slope Efficiency W/A 1.25 1.25 1.25 1.25 1 1.15
Thershold Current A 8 12 15 25 25 25
Operating Current A 50 60 105 ≤430 220 650
Operating Voltage V 1.8 1.8 1.8 2.0 1.55 1.7
Pulse Width us - - - 200 - 500
Pulse frequency Hz - - - 400 - 160
Pulse Duty Cycle % - - - 8 - 8
Geometric
Number of Emitters # 19 49 49 34 24 34
Emitter Width μm 150 100 100 232 200 232
Emitter Pitch μm 500 200 200 290 400 290
Fill Factor % 30 50 50 80 50 80
Cavity Length mm 1.0 1.0 1.5 1.5 3 2
Bar Thickness μm 145 145 145 115 115 115
Bar Length mm 10 10 10 10.25 10.25 10.25
Thermal
Operating Temp. 25 25 25 25 20 25
Storage temp. -40~80 -40~80 -40~80 -40~80 -40~80 -40~80
Water Flow Rate L/min / 0.25 0.25 0.20 0.25 0.25

(8) High-power Diode Laser Stacks – MCP Series

Optical
Center Wavelength nm 808 808 808
Wavelength Tolerance nm ±10 ±10 ±3
Output Power W 60 100 300
Number of Bars # 2 ~ 60 2 ~ 60 2 ~ 60
Spectral Width (FWHM) nm ≤8 ≤8 4
Operating Mode # CW CW QCW
Fast-axis Divergence Deg ≤42 ≤42 40
Slow-axis Divergence Deg ≤10 ≤10 10
Wavelength Temp Coefficient nm/℃ 0.28 0.28 0.28
Electrical
Power Conversion Efficiency % 50 50 50
Slope Efficiency/Bar W/A ≥1.1 ≥1.1 1.1
Threshold Current A 4.5 4.5 4.5
Operating Current A 0.16 0.16 290
Operating Voltage/Bar V ≤2 ≤2 1.8
Thermal
Operating Temperature 15 ~ 35 15 ~ 35 25
Storage Temperature 0~55 0~55 0~55
Bar/Water Velocity/Bar l/m 0.3~0.5 0.3~0.5 0.3
Entrace Maximum Pressure psi 55 55 55
Water Type - DI Water DI Water DI Water
Deionized Water Resistivity(DI) kΩ·cm 200~500 200~500 200~500
Pure Water Filter Particles μm <20 <20 <20

(9) High-power Diode Laser Stacks – QCP Series

Optical
Center Wavelength nm 808 808
Wavelength Tolerance W ±3 ±10
Bar Output Power/Bar % 300 40
Number of Bars % 2 ~ 24 60
Total Output Power μm - 2400
Bar-to-Bar Spacing - 0.4 ~ 1.8 0.9
Spectral Width (FWHM) - 4 8
Pulse Width m 50-500 10-100
Repetition Rate 1-200 1-10
Fast-axis Divergence(FWHM) nm 40 40
Slow-axis Divergence(FWHM) mW 10 10
Wavelength Temp Coefficient 0.28 0.28
Electrical
Electro-optic Conversion Eff % 50 50
Slope Efficiency/Bar W/A 1.1 1.1
Threshold Current A 20 10
Operating Current A 300 50
Operating Voltage/Bar V 2 1.8
Thermal
Water Type - Pure Water Pure Water
Operating Temperature 25 25
Storage Temperature -40-85 -40-85

(10) High-power Diode Laser Devices – TO Series

Optical
Min Typical Max
Center Wavelength nm 820 830 840
Wavelength Tolerance nm ±10
Output Power W 1.0
Spectral Width(FWHM) nm 3.0 4.0
Wavelength Temp Coefficient nm/℃ 0.3
Electrical
Electro-optic Conversion Eff % 36 42
Slope Efficiency W/A 1.05 1.1
Threshold Current A 0.38 0.45
Operating Current A 1.28 1.40
Operating Voltage V 1.8 2.2
Thermal
Operating Temperature 0 25 40
Storage Temperature -20~70

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