MT46H16M32LFB5-5 IT:C TR IC DRAM 512MBIT PAR 90VFBGA Micron Technology Inc.
Brand Name:Micron Technology Inc.
Model Number:MT46H16M32LFB5-5 IT:C TR
Minimum Order Quantity:1
Delivery Time:3-5 work days
Payment Terms:T/T
Price:Based on current price
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Location:
Shenzhen China
Address:
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
Supplier`s last login times:
within 26 hours
Product Details
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Product Details
Product Details
Mobile Low-Power DDR SDRAM
Features
• VDD/VDDQ = 1.70–1.95V• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Product Category | Memory ICs |
| Series | - |
| Packaging | Tape & Reel (TR) Alternate Packaging |
| Package-Case | 90-VFBGA |
| Operating-Temperature | -40°C ~ 85°C (TA) |
| Interface | Parallel |
| Voltage-Supply | 1.7 V ~ 1.95 V |
| Supplier-Device-Package | 90-VFBGA (8x13) |
| Memory Capacity | 512M (16M x 32) |
| Memory-Type | Mobile LPDDR SDRAM |
| Speed | 200MHz |
| Format-Memory | RAM |
Descriptions
SDRAM - Mobile LPDDR Memory IC 512Mb (16M x 32) Parallel 200MHz
5.0ns 90-VFBGA (8x13)
MT46H16M32LFB5-5 IT:C TR IC DRAM 512MBIT PAR 90VFBGA Micron Technology Inc.
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