IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications

Brand Name:Infineon Technologies
Model Number:IRFP2907PBF
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications


IRFP2907PBF MOSFET

This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET is suitable for high power applications such as power switching, audio amplifiers, and motor control.


Parameters:
- Drain-Source Voltage: 100V
- Drain Current: 19A
- Switching Speed: Fast
- Gate-Source Threshold Voltage: Low
- Thermal Stability: Good
- Frequency Performance: Excellent
- Package: Robust


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China IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications supplier

IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications

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