FDBL86062-F085 MOSFET Power Electronics 8-PowerSFN Package Advanced Ultra Low Gate Charge Technology
Brand Name:onsemi
Model Number:FDBL86062-F085
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Shenzhen China
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Product Details
FDBL86062-F085 MOSFET Power
Electronics 8-PowerSFN Package Advanced Ultra Low Gate Charge Technology
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 6970 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 429W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | 8-HPSOF | |
| Package / Case |
The FDBL86062-F085 is a silicon carbide (SiC) MOSFET power electronics module from Infineon Technologies. This 8-PowerSFN module is designed to provide a low-loss, high-efficiency solution for a wide range of power conversion applications, such as motor drives, solar inverters and power supplies. The device features a rated current of 8A, a total gate charge of 7.5nC, a maximum operating junction temperature of 175°C and a maximum drain-source voltage of 650V. The device is also RoHS compliant and ESD protected. The module is built with a robust package to provide superior thermal performance and improved reliability. It is a reliable, cost-effective solution for high-power applications.
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FDBL86062-F085 MOSFET Power Electronics 8-PowerSFN Package Advanced Ultra Low Gate Charge Technology
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