Power MOSFET NTMFS4C025NT1G for High-Performance Switching and Power Conversion Applications

Brand Name:onsemi
Model Number:NTMFS4C025NT1G
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
Product Details Company Profile
Product Details
Power MOSFET NTMFS4C025NT1G for High-Performance Switching and Power Conversion Applications
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1683 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.55W (Ta), 30.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case

Product Listing:

Product Name: NTMFS4C025NT1G
Manufacturer: ON Semiconductor
Product Type: MOSFET Power Electronics

Parameters:

• Drain-Source Voltage (Vdss): 25V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 4A
• Static Drain-Source On-Resistance (Rds): 0.0055ohm
• Power Dissipation (Pd): 2.25W
• Operating Temperature Range: -55°C to +150°C
• Mounting: SMD/SMT


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China Power MOSFET NTMFS4C025NT1G for High-Performance Switching and Power Conversion Applications supplier

Power MOSFET NTMFS4C025NT1G for High-Performance Switching and Power Conversion Applications

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