FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications

Brand Name:onsemi
Model Number:FDD3672
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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Product Details

FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications


FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
28mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1710 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
135W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-252AA
Package / Case

Product Listing:

ON Semiconductor FDD3672 - N-Channel Power MOSFET

The FDD3672 is a N-Channel power MOSFET manufactured by ON Semiconductor. It offers excellent power dissipation, low gate charge and fast switching speed.


Features:
• 100V drain-source breakdown voltage
• Maximum continuous drain current of 10.2A
• Low gate charge: Qg = 16nC typical
• Maximum drain-source on-state resistance of 0.48Ω
• Internal avalanche energy rated at EAS = 7.3mJ
• Maximum operating junction temperature of 175°C
• Average gate charge: Qg = 16nC typical
• Fast switching speed: tD(on) = 10ns typical
• Lead-free, RoHS-compliant package


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FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications

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