IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications
Brand Name:Infineon Technologies
Model Number:IRF530NPBF
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
IRF530NPBF MOSFET Power Electronics
High Power N Channel MOSFET Switching Applications
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 70W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-220AB | |
Package / Case |
Product Listing:
Product Name: IRF530NPBF MOSFET
Package Type: TO-220
Max Drain Source Voltage: 100V
Max Gate Source Voltage: 20V
Continuous Drain Current: 16A
Pulsed Drain Current: 100A
Rise/Fall Time: 45nS
RDS(on): 0.8ohm
Vgs(th): 2-4V
Thermal Resistance: 2.7°C/W
Operating Temperature Range: -55 to +175°C
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IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications
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