MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor

These miniature surface mount MOSFETs low RDS(on) assure

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry.

Features

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Miniature SOT−23 Surface Mount Package Saves Board Space

• IDSS Specified at Elevated Temperature

• AEC Q101 Qualified and PPAP Capable − MVSF2N02EL

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC−DC Converters

• Power Management in Portable and Battery Powered Products, ie:

Computers, Printers, PCMCIA Cards, Cellular and Cordless

Telephones

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.5 nC @ 4 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 5 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3