SVD5865NLT4G Mosfet Tube High Power Low On Resistance TO-263AB

Brand Name:onsemi
Model Number:SVD5865NLT4G
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Verified Supplier
Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
Product Details Company Profile
Product Details

This listing is for a SVD5865NLT4G MOSFET Power Electronics.


Features and Specifications:


- MOSFET Type: N-Channel
- Drain Source Voltage (Vds): 60V
- Drain-Source On-Resistance (Rds): 0.0065 Ohm
- Continuous Drain Current (Id): 58A
- Power Dissipation (Pd): 230W
- Maximum Junction Temperature (Tj): 175 degrees Celsius
- Operating Temperature: -55 to 175 degrees Celsius
- Mounting Type: Surface Mount
- Package/Case: TO-263-3
- Supplier Device Package: TO-263AB
- Lead Free Status / RoHS Status: Lead free / RoHS Compliant
- Product: MOSFET Power Electronics
- Brand: SVD


Product Status
Obsolete
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
DPAK-3
Package / Case
Base Product Number

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China SVD5865NLT4G Mosfet Tube High Power Low On Resistance TO-263AB supplier

SVD5865NLT4G Mosfet Tube High Power Low On Resistance TO-263AB

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