Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor
Brand Name:onsemi
Model Number:FDV301N
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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within 38 hours
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Product Details
FDV301N N-Channel MOSFET Power Electronics
The FDV301N is an N-channel power MOSFET designed for high power switching applications. It is suitable for use in high-efficiency power conversion circuits, such as DC-DC converters, AC-DC converters, and motor control circuits. The device is rated at 60V and 18A, and features low on-resistance, low gate charge, and low capacitance for fast switching speeds.
Features:
• N-Channel MOSFET
• Rated for 60V and 18A
• Low on-resistance
• Low gate charge
• Low capacitance
• Fast switching speeds
Applications:
• DC-DC converters
• AC-DC converters
• Motor control circuits
• High-efficiency power conversion
Package: TO-220
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 4.5V | |
Vgs(th) (Max) @ Id | 1.06V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 9.5 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 350mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case | ||
Base Product Number |
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Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor
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