S29GL512T10FHI010 Flash Memory Chips 64-LBGA Package 1 Gb 512Mb (64 MB) MIRRORBIT™ Flash Parallel 3.0V
Brand Name:Infineon / CYPRESS
Model Number:S29GL512T10FHI010
Minimum Order Quantity:1
Delivery Time:1 - 3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location:
Shenzhen China
Address:
1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times:
within 38 hours
Product Details
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Product Details
S29GL512T10FHI010 Flash Memory Chips
64-LBGA Package 1 Gb 512Mb (64 MB) MIRRORBIT™ Flash Parallel 3.0V
Memory Type | Non-Volatile | |
Memory Format | ||
Technology | FLASH - NOR | |
Memory Size | ||
Memory Organization | 64M x 8 | |
Memory Interface | Parallel | |
Write Cycle Time - Word, Page | 60ns | |
Access Time | 100 ns | |
Voltage - Supply | 2.7V ~ 3.6V | |
Operating Temperature | -40°C ~ 85°C (TA) | |
Mounting Type | ||
Package / Case | ||
Supplier Device Package | 64-FBGA (13x11) |
General description
The S29GL01GT/512T are MIRRORBIT™ flash products fabricated on
45-nm process technology. These devices offer a fast page access
time as fast as 15 ns, with a corresponding random access time as
fast as 100 ns. They feature a Write Buffer that allows a maximum
of 256 words/512 bytes to be programmed in one operation, resulting
in faster effective programming time than standard programming
algorithms. This makes these devicesideal for today’s embedded
applications that require higher density, better performance, and
lower power consumption.
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S29GL512T10FHI010 Flash Memory Chips 64-LBGA Package 1 Gb 512Mb (64 MB) MIRRORBIT™ Flash Parallel 3.0V
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