Infineon IHW30N135R5XKSA1 High-Power IGBT Module Optimized for Automation Applications

Brand Name:Infineon Technologies
Model Number:IHW30N135R5XKSA1
Minimum Order Quantity:1
Delivery Time:1-3 days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:original
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
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Infineon IHW30N135R5XKSA1 High-Power IGBT Module Optimized for Automation Applications


Product Name: IHW30N135R5XKSA1 IGBT Power Module

Product Description:

The IHW30N135R5XKSA1 is an insulated-gate bipolar transistor (IGBT) power module. This device is designed for high-frequency switching applications and provides a high blocking voltage of 1300V, a low on-state voltage drop of 2V, and low capacitance. It is suitable for use in a variety of applications such as motor control, renewable energy, and industrial automation.

Features:

• High blocking voltage of 1300V
• Low on-state voltage drop of 2V
• Low capacitance
• Suitable for motor control, renewable energy, and industrial automation applications
• Easy to install and use

Specifications:

• Package Type: TO-247
• Voltage Rating: 1300V
• Current Rating: 30A
• Power Dissipation: 75W
• Operating Temperature Range: -40°C to +150°C


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Infineon IHW30N135R5XKSA1 High-Power IGBT Module Optimized for Automation Applications

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