HMC326MS8GETR Surface Mount Transistor High Power High Linearity

Brand Name:Analog Devices Inc.
Model Number:HMC326MS8GETR
Minimum Order Quantity:1
Delivery Time:1-7days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
Place of Origin:Multi-origin
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Location: Shenzhen China
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Supplier`s last login times: within 38 hours
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HMC326MS8GETR RF Power Transistor - High Power High Linearity


HMC326MS8GETR, GaAs pHEMT, RF Power Transistor


Product Description:


The HMC326MS8GETR is a high-performance, GaAs pHEMT, RF power transistor. It is designed for use in a wide variety of applications such as cellular and broadband communications. This device offers excellent RF performance over a wide range of frequencies, with a maximum output power of 18.5 dBm and a maximum gain of 16 dB. The HMC326MS8GETR is also extremely linear, with a 3rd order intercept point of +40 dBm. This device is supplied in a lead-free, RoHS compliant, 3 x 3 mm QFN package.


Features:


• 18.5 dBm output power
• 16 dB gain
• +40 dBm 3rd order intercept point
• Operating frequency range: 0.2 to 2.0 GHz
• Lead-free, RoHS compliant, 3 x 3 mm QFN package


Why buy from us >>> Fast / Safely / Conveniently


• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.


How to buy >>>


• Contact us by email & sent your inquire with your Transport destination .
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Service >>>


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HMC326MS8GETR Surface Mount Transistor High Power High Linearity

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