25LC512T-I/SN Flash Ic Memory EEPROM 512Kbit SPI 20 MHz 8-SOIC

Brand Name:MICROCHIP
Certification:RoHS
Model Number:25LC512T-I/SN
Minimum Order Quantity:3300 PCS
Delivery Time:2-3 DAYS
Payment Terms:L/C, D/A, D/P, T/T
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Location: Shenzhen China
Address: Rm1025, International Culture Building, ShenNan Mid Road #3039, FuTian District, Shenzhen
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Product Details

25LC512T-I/SN EEPROM Memory IC 512Kbit SPI 20 MHz 8-SOIC

Description:

The Microchip Technology Inc. 25LC512 is a 512 Kbit serial EEPROM memory with byte-level and page-level

serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based

products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial

Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI)

and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.


Quick Detail:

Manufacturer
Microchip Technology
Manufacturer Product Number
25LC512T-I/SN
Description
IC EEPROM 512KBIT SPI 8SOIC
Detailed Description
EEPROM Memory IC 512Kbit SPI 20 MHz 8-SOIC

Product Attributes:

TYPE
DESCRIPTION
Category
Memory
Mfr
Microchip Technology
Product Status
Active
Digi-Key Programmable
Verified
Memory Type
Non-Volatile
Memory Format
EEPROM
Technology
EEPROM
Memory Size
512Kbit
Memory Organization
64K x 8
Memory Interface
SPI
Clock Frequency
20 MHz
Write Cycle Time - Word, Page
5ms
Voltage - Supply
2.5V ~ 5.5V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
25LC512

Additional Resources:

ATTRIBUTEDESCRIPTION
Other Names
25LC512TISN
25LC512T-I/SNDKR
25LC512T-I/SNTR
25LC512T-I/SNCT
Standard Package3300

Features

• 20 MHz max. Clock Speed

• Byte and Page-level Write Operations:

- 128-byte page

- 5 ms max.

- No page or sector erase required

• Low-Power CMOS Technology:

- Max. Write Current: 5 mA at 5.5V, 20 MHz

- Read Current: 10 mA at 5.5V, 20 MHz

- Standby Current: 1A at 2.5V (Deep powerdown)

• Electronic Signature for Device ID

• Self-Timed Erase and Write cycles:

- Page Erase (5 ms, typical)

- Sector Erase (10 ms/sector, typical)

- Bulk Erase (10 ms, typical)

• Sector Write Protection (16K byte/sector):

- Protect none, 1/4, 1/2 or all of array

• Built-In Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

• High Reliability:

- Endurance: 1 Million erase/write cycles

- Data Retention: >200 years

- ESD Protection: >4000V

• Temperature Ranges Supported:

- Industrial (I): -40°C to +85°C

- Extended (E): -40°C to +125°C

• RoHS Compliant

• Automotive AEC-Q100 Qualified

Data Picture:


China 25LC512T-I/SN Flash Ic Memory EEPROM 512Kbit SPI 20 MHz 8-SOIC supplier

25LC512T-I/SN Flash Ic Memory EEPROM 512Kbit SPI 20 MHz 8-SOIC

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