IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET

Description

Features

• IXYS advanced low Qg process

• Low gate charge and capacitances - easier to drive - faster switching

• International standard packages z Low RDS (on) z Rated for unclamped Inductive load

switching (UIS) rated

• Molding epoxies meet UL 94 V-0 flammability classification

Applications

• DC-DC converters z Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers z AC motor control

• Temperature and lighting controls

• Specifications

• Product Attribute	Attribute Value
  Product Category:	MOSFET
  Technology:	Si
  Mounting Style:	Through Hole
  Package / Case:	TO-264-3
  Transistor Polarity:	N-Channel
  Number of Channels:	1 Channel
  Vds - Drain-Source Breakdown Voltage:	800 V
  Id - Continuous Drain Current:	27 A
  Rds On - Drain-Source Resistance:	320 mOhms
  Vgs - Gate-Source Voltage:	- 20 V, + 20 V
  Vgs th - Gate-Source Threshold Voltage:	4.5 V
  Qg - Gate Charge:	170 nC
  Minimum Operating Temperature:	- 55 C
  Maximum Operating Temperature:	+ 150 C
  Pd - Power Dissipation:	500 W
  Channel Mode:	Enhancement
  Packaging:	Tube
  Brand:	IXYS
  Configuration:	Single
  Fall Time:	13 ns
  Forward Transconductance - Min:	20 S
  Height:	26.16 mm
  Length:	19.96 mm
  Product Type:	MOSFET

• Shopping Guide

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.