5*10mm2 SP-Face (11-12) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.1 Ω·cm Power Device
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDCD01-001-013
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
Contact Now
Add to Cart
Verified Supplier
Location:
Shanghai Shanghai China
Address:
Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Supplier`s last login times:
within 2 hours
Product Details
Company Profile
Product Details
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device
Overview
Since the 1990s, it has been used commonly in light emitting diodes
(LED). Gallium nitride gives off a blue light used for disc-reading
in Blu-ray. Additionally, gallium nitride is used in semiconductor
power devices, RF components, lasers, and photonics. In the future,
we will see GaN in sensor technology.
| (11-22) face Free-standing GaN Substrates | ||||
| Item | GaN-FS-SP-U-S | GaN-FS-SP-N-S | GaN-FS-SP-SI-S | Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 | |||
| Thickness | 350 ±25 µm | |||
| Orientation | (11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2° | |||
| Conduction Type | N-type | N-type | Semi-Insulating | |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm | |
| TTV | ≤ 10 µm | |||
| BOW | - 10 µm ≤ BOW ≤ 10 µm | |||
| Front Surface Roughness | < 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy) | |||
| Back Surface Roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||
| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 | |||
| Macro Defect Density | 0 cm-2 | |||
| Useable Area | > 90% (edge exclusion) | |||
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere | |||
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5°, then (11-22) plane off angle toward M-Axis is 0 ±0.5°.
If δ2= - 1 ±0.2°, then (11-22) plane off angle toward C-Axis is - 1 ±0.2°.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
5*10mm2 SP-Face (11-12) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.1 Ω·cm Power Device
Inquiry Cart
0