4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Model Number:JDWY03-001-024
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
Contact Now
Add to Cart
Active Member
Location:
Shanghai Shanghai China
Address:
Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Supplier`s last login times:
within 2 hours
Product Details
Company Profile
Product Details
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer
Why Use GaN Wafers?
Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better performance at high temperatures.
GaN is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications
optoelectronic
high-power devices
high-frequency devices
| 4-inch Mg-doped GaN/Sapphire Substrates | ||
| Item | GaN-T-C-P-C100 | |
| Dimensions | 100 ± 0.2mm | |
| Thickness/Thickness STD | 4.5 ± 0.5 μm / < 3% | |
| Orientation | C plane (0001) off angle toward A-axis 0.2 ± 0.1 ° | |
| Orientation Flat of GaN | (1-100) 0 ± 0.2 °, 30 ± 1 mm | |
| Conduction Type | P-type | |
| Resistivity (300K) | < 10 Ω·cm | |
| Carrier Concentration | > 1 x 1017 cm-3 (doping concentration of p+GaN ≥ 5 x 1019cm-3) | |
| Mobility | > 5 cm2/V·s | |
| *XRD FWHMs | (0002) < 300arcsec,(10-12) < 400arcsec | |
| Structure | ~ 0.5 μm p+GaN/~ 1.5 μm p-GaN /~ 2.5 μm uGaN /~ 25 nm uGaN buffer/430 ± 25 μm sapphire | |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ± 0.1 ° | |
| Orientation Flat of Sapphire | (11-20) 0 ± 0.2 °, 30± 1 mm | |
| Sapphire Polish | Single side polished (SSP) / Double side polished (DSP) | |
| Useable Area | > 90% (edge and macro defects exclusion) | |
| Package | Packaged in a cleanroom in containers: single wafer box (< 3 PCS) or cassette (≥ 3 PCS) | |
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Inquiry Cart
0