6inch SiC Epitaxial Wafer
Brand Name:GaNova
Certification:UKAS/ISO9001:2015
Delivery Time:3-4 week days
Payment Terms:T/T
Place of Origin:Suzhou China
Packaging Details:Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
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Location:
Shanghai Shanghai China
Address:
Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Supplier`s last login times:
within 2 hours
Product Details
Company Profile
Product Details
P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward <11-20>±0.5 °
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For Power And Microw
6inch 4H-SiC substrate N-Type
Overview
Our company hava a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
Property | P-MOS Grade | P-SBD Grade | D Grade |
| Crystal Form | 4H | ||
| Polytype | None Permitted | Area≤5% | |
| (MPD) a | ≤0.2 /cm2 | ≤0.5 /cm2 | ≤5 /cm2 |
| Hex Plates | None Permitted | Area≤5% | |
| Hexagonal Polycrystal | None Permitted | ||
| Inclusions a | Area≤0.05% | Area≤0.05% | N/A |
| Resistivity | 0.015Ω•cm—0.025Ω•cm | 0.015Ω•cm—0.025Ω•cm | 0.014Ω•cm—0.028Ω•cm |
| (EPD)a | ≤4000/cm2 | ≤8000/cm2 | N/A |
| (TED)a | ≤3000/cm2 | ≤6000/cm2 | N/A |
| (BPD)a | ≤1000/cm2 | ≤2000/cm2 | N/A |
| (TSD)a | ≤600/cm2 | ≤1000/cm2 | N/A |
| Stacking Fault | ≤0.5% Area | ≤1% Area | N/A |
Surface Metal Contamination | (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2 | ||
| Diameter | 150.0 mm +0mm/-0.2mm | ||
| Surface Orientation | Off-Axis:4°toward <11-20>±0.5 ° | ||
| Primary Flat Length | 47.5 mm ± 1.5 mm | ||
| Secondary Flat Length | No Secondary Flat | ||
| Primary Flat Orientation | Parallel to<11-20>±1° | ||
| Secondary Flat Orientation | N/A | ||
| Orthogonal Misorientation | ±5.0° | ||
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP | ||
| Wafer Edge | Beveling | ||
Surface Roughness (10μm×10μm) | Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm | ||
| Thickness a | 350.0μm± 25.0 μm | ||
| LTV(10mm×10mm)a | ≤2μm | ≤3μm | |
| (TTV)a | ≤6μm | ≤10μm | |
| (BOW) a | ≤15μm | ≤25μm | ≤40μm |
| (Warp) a | ≤25μm | ≤40μm | ≤60μm |
| Chips/Indents | None Permitted ≥0.5mm Width and Depth | Qty.2 ≤1.0 mm Width and Depth | |
Scratches a (Si Face,CS8520) | ≤5 and Cumulative Length≤0.5×Wafer Diameter | ≤5 and Cumulative Length≤1.5×Wafer Diameter | |
| TUA(2mm*2mm) | ≥98% | ≥95% | N/A |
| Cracks | None Permitted | ||
| Contamination | None Permitted | ||
| Property | P-MOS Grade | P-SBD Grade | D Grade |
| Edge Exclusion | 3mm | ||
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
6inch SiC Epitaxial Wafer
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