SIC, SISIC, SSIC SILICON CARBIDE CERAMICS ADVANCED INDUSTRIAL CERAMICS
Brand Name:ZG
Certification:CE
Model Number:MS
Minimum Order Quantity:10000 pieces
Delivery Time:5-8 working days
Payment Terms:L/C, D/A, D/P, T/T, Western Union, MoneyGram
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Location:
Zhengzhou Henan China
Address:
No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
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within 48 hours
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Product Details
Silicon carbide (SiC, SiSiC, SSiC)
Silicon Carbide Ceramics ( SiC, SiSiC, SSiC), advanced industrial Ceramics
Silicon carbide behaves almost like a diamond. It is not only the lightest, but also the hardest ceramic material and has excellent thermal conductivity, low thermal expansion and is very resistant to acids and lyes.
Basic properties of the material:
| Properties | Brand of material | ||
| SCR-Si1 | SCR-Si2-HP | SCR-SSCR-S | |
| Composition | SiC+Si | SiC+Si+C | SiC |
| Density, g/sm3 | 3,05-3,07 | 3,00-3,05 | 3,10-3,15 |
| Isolated porosity, % | 0 | 0 | 2 |
| Hardness (at SiC), GPa | 25-30 | 25-30 | 25-30 |
| Flexural strength, MPa | 320-350 | 270-300 | 380-410 |
| Compressive strength, MPa | 3300-3500 | 2800-3100 | 3000-3500 |
| Thermal conductivity at 20-100°С, W/mK | 110-120 | 100-130 | 100-110 |
| Coefficient of linear thermal expansion at 20-1000°С, 10-6 К-1 | 3,4-4,9 | 3,5-5,0 | 3,0-4,6 |
| Maximum operating temperature Oxidative environment A reducing or inert environment | 1350 1350 | 1350 1350 | 1350 1350 |
The main applications are:
bearings for pumps and compressors;
rings of mechanical seals;
ceramic plungers;
elements of valves and stop valves;
lining for protection from wear and corrosion;
sorting wheels of various grinding machinery;
lining for cyclones and calciners for cement plants;
nozzles;
crucibles, boats;
burners;
furniture and lining of furnaces;
substrates, plates;
products for the metallurgical industry.
Sintered Silicon Carbide Related Data:
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property | Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
Features:
- high hardness (4th after diamond);
- high thermal conductivity;
- excellent corrosion resistance;
- low coefficient of thermal expansion;
- low density;
- semiconductor properties;
- stability in a wide range of temperatures;
- low friction coefficient.
Product info & Technical Data:
reactively bonded silicon carbide (SCR-Si1, SCR-Si2) There is free silicon in the composition of the material. This material is cheaper, but not recommended for alkali applications.
sintered silicon carbide (SCR-S) Pure silicon carbide. More expensive, but versatile. Recommended for all environments.
SIC, SISIC, SSIC SILICON CARBIDE CERAMICS ADVANCED INDUSTRIAL CERAMICS
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