Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551
Brand Name:Original
Model Number:MMBT5551
Minimum Order Quantity:10 pcs
Delivery Time:1-7 days
Payment Terms:T/T
Price:Bargain
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Location:
Shenzhen China
Address:
Room A202, building A, No.6 huanping Road, Gaoqiao community, Pingdi street, Longgang District, Shenzhen 518117
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within 23 hours
Product Details
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Product Details
2N5551 / MMBT5551 NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon
SOT-23 - Power Transistor and Darlingtons
Part number
BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56
CMBTA42-T CMBT4401-T
CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T
CMBT3904-T CMBTA92-T
CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551
Electrical Characteristics
Mfr. # | MMBT5551 |
| Mounting Style | SMD/SMT |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 160 V |
| Collector- Base Voltage VCBO | 180 V |
| Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 0.2 V |
| Maximum DC Collector Current | 0.6 A |
| Pd - Power Dissipation | 325 mW |
| Gain Bandwidth Product fT | 300 MHz |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| DC Collector/Base Gain hfe Min | 80 at 10 mA, 5 V |
| DC Current Gain hFE Max | 250 at 10 mA, 5 V |
| Product Type | BJTs - Bipolar Transistors |
Electrical Characteristics (at Ta = 25°C unless otherwise specified)
Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551
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