RS3M High Voltage Fast Recovery Diode 3a SMD DO 214AB Package
Brand Name:trusTec
Certification:ROHS
Model Number:RS3M
Minimum Order Quantity:3K PCS
Delivery Time:10 work days fresh products
Payment Terms:T/T
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Location:
Changzhou Jiangsu China
Address:
No. 38 Hongye Road, New Northern District, Changzhou City, 213033, Jiangsu Province, China
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Product Details
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Product Details
RS3M 3 Ampere 1000 Volt Silicon Fast Recovery Rectifier Diode in
SMD DO-214AB Package
RS3A THRU RS3M
SURFACE MOUNT FAST RECOVERY RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere
Mechanical Characteristics
Case: JEDEC DO-214AB molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.007 ounce, 0.25grams
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for
capacitive load current derate by 20%.
| SYMBOLS | RS3A | RS3B | RS3D | RS3G | RS3J | RS3K | RS3M | UNITS | |
|---|---|---|---|---|---|---|---|---|---|
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | VOLTS |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | VOLTS |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | VOLTS |
Maximum average forward rectified current at TL=75 C | I(AV) | 3 | Amps | ||||||
Peak forward surge current 8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) | IFSM | 100 | Amps | ||||||
Maximum instantaneous forward voltage at 3.0A | VF | 1.3 | VOLTS | ||||||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100℃ | IR | 5.0 50.0 | µA | ||||||
Maximum reverse recovery time (NOTE 1) | trr | 150 | 250 | 500 | ns | ||||
Typical junction capacitance (NOTE 2) | CJ | 60.0 | pF | ||||||
Typical thermal resistance (NOTE 23) | RθJA | 50.0 | ℃/W | ||||||
Operating junction and storage temperature range | TJ,TSTG | -65 to +150 | ℃ | ||||||
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
Characteristic Curves
RS3M High Voltage Fast Recovery Diode 3a SMD DO 214AB Package
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