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High power NPN epitaxial planar bipolar transistor d1047 b817
Product Description
Description
The device is a NPN transistor manufactured using new BiT-LA
(Bipolar transistor for linear amplifier) technology. The resulting
transistor
shows good gain linearity behaviour.
Features
- High breakdown voltage VCEO = 140 V
- Typical ft = 20 MHz
- Fully characterized at 125 oC
Product Category: Bipolar Transistors
Mounting Style: Through Hole
Package / Case: TO-3P-3
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 140 V
Emitter- Base Voltage VEBO: 6 V
Gain Bandwidth Product fT: 20 MHz
Series: 500V Transistors
Packaging: Tube
Continuous Collector Current: 12 A
DC Collector/Base Gain hfe Min: 50
Pd - Power Dissipation: 100 W
Application
- Power supply
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