4H High Purity Semi Insulating SiC Wafer , Production Grade , 3”Size , Low Carrier Concentration

4H High Purity Semi Insulating SiC Wafer, Production Grade,3”Size, Low Carrier Concentration

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available. Please contact us for more information

High Purity Semi Insulating SiC Wafer: Due to the wide band gap, the intrinsic carrier concentration of SiC wafer is very low at room temperature. This value is about 0.13cm-3 for 3C SiC, about 5x10^-2cm2 for 4H SiC and about 1x10^- 6 cm-3 for 6H SiC. This is the main reason why SiC electronic devices can work at high temperature and the leakage current is very small.

SILICON CARBIDE MATERIAL PROPERTIES

4H High Purity Semi Insulating SiC Wafer, Production Grade,3”Size

SiC crystal growth

Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.

Growth of 3C-SiC on Large-Area (Silicon) Substrates
Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on top of large-area siliconsubstrates was first carried out in 1983 , and subsequently followed by a great many others over the years using a variety of growth techniques. Primarily owing to large differences in lattice constant (~20% difference between SiC and Si) and thermal expansion coefficient (~8% difference), heteroepitaxy of SiC using silicon as a substrate always results in growth of 3C-SiC with a very high density of crystallographic structural defects such as stacking faults, microtwins, and inversion domain boundaries . Other largearea wafer materials besides silicon (such as sapphire, silicon-on-insulator, and TiC) have been employed as substrates for heteroepitaxial growth of SiC epilayers, but the resulting films have been of comparablypoor quality with high crystallographic defect densities. The most promising 3C-SiC-on-silicon approach to date that has achieved the lowest crystallographic defect density involves the use of undulant silicon substrates . However, even with this highly novel approach, dislocation densities remain very high compared to silicon and bulk hexagonal SiC wafers.
While some limited semiconductor electronic devices and circuits have been implemented in 3C-SiC grown on silicon, the performance of these electronics (as of this writing) can be summarized as severely limited by the high density of crystallographic defects to the degree that almost none of the operational benefits discussed in Section 5.3 has been viably realized. Among other problems, the crystal defects “leak” parasitic current across reverse-biased device junctions where current flow is not desired. Because excessive crystal defects lead to electrical device shortcomings, there are as yet no commercial electronics manufactured in 3C-SiC grown on large-area substrates. Thus, 3C-SiC grown on silicon presently has more potential as a mechanical material in microelectromechanical systems (MEMS) applications (Section 5.6.5) instead of being used purely as a semiconductor in traditional solid-state transistor electronics.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.