4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"

4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"

PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) on Silicon Wafers) size from 2” to 6” taken place from 850°C up to 1200°C , SiO2 thin film layers on substrate is mainly used as dielectric material and more recently, which are integrated in MEMS (Micro Electro Mechanical Systems) devices., currently the simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen. Usually, thermal oxidation is made on both faces of a silicon wafer. To get only one side oxidized, a protection is used, then the opposite side is dissolved in BHF. As the thermal oxidation is made by run of 25 to 50 wafers and the dissolution is made wafer by wafer; double and single side silicon oxide wafers can be purchased in the same batch.

4inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"

How is Thermal Oxide Applied to Silicon Wafers?

Regularly there are three detail application:

1/Grown Dry Oxidation - By default dry oxide is grown on just one side of the wafer.

2/Wet Oxidation Grown - Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.

3/Deposited CVD - When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.

Are You Looking for an Silicon Wafer?

PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.