880nM 2 PINS 3DU5C IGBT Transistor , NPN Silicon Phototransistor With Metal Encapsulated
Brand Name:VISHAY
Certification:ROHS
Model Number:3DU5C
Minimum Order Quantity:10pcs
Delivery Time:1-3Days
Payment Terms:T/T, Western Union，Paypal
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Location:
Shenzhen Guangdong China
Address:
Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031
Supplier`s last login times:
within 14 hours
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880nM 2 PINS 3DU5C NPN Silicon Phototransistor with Metal Encapsulated
Features :
NPN Silicon Phototransistor;
Model : 3DU5C
Working Voltage(Max.) : 10V;
Reverse Breakdown Voltage : 15V;
Dark Current : 0.3uA
Photocurrent : 0.5-1mA;
Power Consumption : 30mW;
Peak Wavelength : 880nM
Body Size : 7 x 5mm/ 0.28" x 0.2"(L*D);
Total Length : 28mm/ 1.1";
External Material : Metal
880nM 2 PINS 3DU5C IGBT Transistor , NPN Silicon Phototransistor With Metal Encapsulated
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