Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P

Descriptions:

Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Features :

• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.).

Applications :

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

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