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IRLR7843PbF IRLU7843PbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Absolute Maximum Ratings
Parameter | Max. | Units | |
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ± 20 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 161f | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 113f | |
IDM | Pulsed Drain Current c | 620 | |
PD @TC = 25°C | Maximum Power Dissipation g | 140 | W |
PD @TC = 100°C | Maximum Power Dissipation g | 71 | |
Linear Derating Factor | 0.95 | W/°C | |
TJ TSTG | Operating Junction and Storage Temperature Range | -55 to+175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage and Current
Applications
l High Frequency Synchronous Buck Converters for Computer Processor
Power
l High Frequency Isolated DC-DC Converters with Synchronous
Rectification for Telecom and Industrial Use
l Lead-Free