Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF

Brand Name:Infineon
Certification:ROHS
Model Number:IRF640NPBF
Minimum Order Quantity:10pcs
Delivery Time:1-3Days
Payment Terms:T/T, Western Union,Paypal
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Location: Shenzhen Guangdong China
Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031
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Product Details

IRF640NPBF DIP Trans N Channel 200V 18A Switching MOSFET Power Transistor

Description

Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D
2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low- profile application.


Feature


l Advanced Process Technology

l Dynamic dv/dt Rating
l 175°C Operating T emperature

l Fast Switching

l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements

l Lead-Free


Package


China Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF supplier

Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF

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