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Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low package
cost of the TO-220 contribute to its wide acceptance throughout the
industry.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the
lowest possible on- resistance in any existing surface mount
package. The D2Pak is suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF640NL) is available for low- profile
application.
Feature
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating T emperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free
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