IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

Brand Name:Original brand
Certification:Original
Model Number:IGT60R070D1ATMA1
Minimum Order Quantity:2000pcs
Delivery Time:2-3days
Payment Terms:T/T
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Location: Shenzhen Guangdong China
Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China
Supplier`s last login times: within 48 hours
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Product Details

Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor


Feature

• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)


Benefits

• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI


Categories

Mosfet Power Transistor

IGT60R070D1ATMA1
Transistor PolarityN-Channel
Channel No.1 Channel
Leakage Source on-resistance70 mOhms
ConfigureSingle
Pd-Power Dissipation125 W
Vgs th-Gate Source threshold Voltage0.9 V
Channel PatternEnhancement



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China IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor supplier

IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

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