Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

Brand Name:Original brand
Certification:Original
Model Number:IGOT60R070D1AUMA1
Minimum Order Quantity:800pcs
Delivery Time:2-3days
Payment Terms:T/T
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Location: Shenzhen Guangdong China
Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China
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Product Details

Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor


Features

• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)


Benefits

• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI


Categories

MOSFET 600V CoolGaN Power Transistor

IGOT60R070D1AUMA1
Transistor PolarityN-Channel
Working Temperature Range-55C to +150C
Leakage Source on-resistance70 mOhms
PackagePG-DSO-20
Pd-Power Dissipation125 W
Vgs th-Gate Source threshold Voltage600 V
Continous Leakage Current31 A



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Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

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