STGD5H60DF Trans IGBT Integrated Circuit Chips N-CH 600V 10A 83000mW 3 Pin DPAK T/R
Brand Name:STMicroelectronics
Certification:Original Part
Model Number:STGD5H60DF
Minimum Order Quantity:1PCS
Delivery Time:Immediate
Payment Terms:T/T, Western Union, Paypal, Wechat Pay
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Location:
Shenzhen Guangdong China
Address:
9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China
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STGD5H60DF Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
Basic Information :
Part No: STGD5H60DF
Description: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
Collector Current (DC) : 10(A)
Collector-Emitter Voltage: 600(V)
Package Type: DPAK
Mounting: Surface Mount
Operating Temperature Classification: Military
Packaging: Tape and Reel
Rad Hardened: No
Pin Count: 2 +Tab
Configuration: Single
Channel Type: N
Operating Temperature (Max): 175C
Gate to Emitter Voltage (Max): ±20(V)
Operating Temperature (Min): -55C
| Lead Shape | Gull-wing |
| Package Length | 6.6(Max) |
| Package Width | 6.2(Max) |
| Tab | Tab |
| PCB changed | 2 |
| Package Height | 2.4(Max) |
| Mounting | Surface Mount |
| Technology | Field Stop|Trench |
| Channel Type | N |
| Configuration | Single |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Typical Collector Emitter Saturation Voltage (V) | 1.5 |
| Maximum Continuous Collector Current (A) | 10 |
| Maximum Gate Emitter Leakage Current (uA) | 0.25 |
| Maximum Power Dissipation (mW) | 83000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Automotive | No |
| Pin Count | 3 |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Military | No |
for product datasheet, CONTACT US directly.
STGD5H60DF Trans IGBT Integrated Circuit Chips N-CH 600V 10A 83000mW 3 Pin DPAK T/R
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