30V 200mA Epitaxial Planar Silicon Rectifier Diode B520S-30

Brand Name:Huixin
Certification:ISO14001 ISO9001 ISO/TS16949 UL
Model Number:RB520S-30 SOD-523
Minimum Order Quantity:3000 PCS
Delivery Time:2-4Weeks
Payment Terms:T/T, Paypal, Cash
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Location: Dongguan Guangdong China
Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
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Product Details

Silicon Epitaxial Planar Schottky Barrier Diode RB520S-30


These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited.


For low current rectification and high speed switching applications.


RB520S-30 SOD523 Datasheet.pdf


Features:


  • Extremely Fast Switching Speed
  • Extremely small surface mounting type
  • High reliability
  • Low Reverse Current
  • Marking Code: "B"

Maximum Ratings And Electrical Characteristics:

Ratings at 25°C ambient temperature unless otherwise specified.


Parameter



Symbol


Value


Units


Reverse Voltage



VR


30


V


Mean Rectifying Current


IF(AV)



200


mA


Peak Forward Surge Current


IFSM



1


A


Junction Temperature


TJ



125



Forward Voltage at IF = 200 mA


VF



0.6


V



Note: ESD sensitive product handling required.


China 30V 200mA Epitaxial Planar Silicon Rectifier Diode B520S-30 supplier

30V 200mA Epitaxial Planar Silicon Rectifier Diode B520S-30

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